| 000 | nam | |
| 001 | 2210080062113 | |
| 005 | 20140630134211 | |
| 008 | 840601s1982 bnka FB 000 kor | |
| 040 | ▼a221008 | |
| 041 | ▼akoreng | |
| 100 | ▼a한진옥 | |
| 245 | 00 | ▼a酸素 雰圍氣가 TiO2 薄膜 素子에 미치는 影響에 관한 硏究/▼d韓進玉 |
| 260 | ▼a부산:▼b東亞大學校,▼c1982 | |
| 300 | ▼a26p.:▼b삽도;▼c26cm | |
| 502 | ▼a학위논문(석사)▼b東亞大學校 大學院:▼c電子工學科,▼d1982 | |
| 520 | ▼b영문초록 : Al-TiO2-Al sandwich type thin films are fabricated by the vacuun evaporation, and they are made as annealed samples (under oxygen atmosphere) and unannealed ones. Measurements are carried out for dielectric constant ε', dielectric loss ε" , and loss factor (tan δ) with the variation of frequency. The experimental results are as follows , 1. The produced capacitor shows dielectric constant 60-105 at frequency lKHZ and capacitance 1500-2500pF. 2. When annealed under oxygen atmosphere , the values of dielectric constant and capacitance of the capacitor increases with the period of annealing time. 3. It can be confirmed through experiment that the annealed sample under oxygen atmosphere has larger values of dielectric constant and capacitance. 4. It can be said that the produced sample with this procedure could be used as a thin film capacitor. | |
| 650 | ▼a박막▼x전자공학 | |
| 856 | ▼adonga.dcollection.net▼uhttp://donga.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002145395 | |
| 950 | ▼aFB | |
| 950 | ▼a비매품▼b￦3,000▼c(추정가) |
酸素 雰圍氣가 TiO2 薄膜 素子에 미치는 影響에 관한 硏究
Material type
학위논문 동서
Title
酸素 雰圍氣가 TiO2 薄膜 素子에 미치는 影響에 관한 硏究
Author's Name
Publication
부산: 東亞大學校 1982
Physical Description
26p: 삽도; 26cm
학위논문주기
학위논문(석사) 東亞大學校 大學院: 電子工學科, 1982
Keyword
영문초록 : Al-TiO2-Al sandwich type thin films are fabricated by the vacuun evaporation, and they are made as annealed samples (under oxygen atmosphere) and unannealed ones. Measurements are carried out for dielectric constant ε', dielectric loss ε" , and loss factor (tan δ) with the variation of frequency. The experimental results are as follows , 1. The produced capacitor shows dielectric constant 60-105 at frequency lKHZ and capacitance 1500-2500pF. 2. When annealed under oxygen atmosphere , the values of dielectric constant and capacitance of the capacitor increases with the period of annealing time. 3. It can be confirmed through experiment that the annealed sample under oxygen atmosphere has larger values of dielectric constant and capacitance. 4. It can be said that the produced sample with this procedure could be used as a thin film capacitor.
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