Novel Low Thermal Budget Bonding Using Single Wafer Thermal Processing System, Resulting in Excellent Wafer-to-Wafer Hybrid Bonding at sub-0.5um Pitch
- Resource Type
- Conference
- Authors
- Gorchichko, Mariia; Sharma, Shashank; Ng, Ben; Sherwood, Tyler; Jeon, Yoocharn; Mcintyre, Dylan; Li, Kun; Singh, Sarabjot; Iler, Evan; Knapp, David; Prakash, Amit; Nguen, Viet; Sreenivasan, Raghav; Krishnan, Siddarth; Chudzik, Michael
- Source
- 2024 IEEE 74th Electronic Components and Technology Conference (ECTC) ECTC Electronic Components and Technology Conference (ECTC), 2024 IEEE 74th. :404-407 May, 2024
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Industries
Annealing
Furnaces
Hydrogen
Electronic components
Bonding
Carbon
DRAM
HBM
W2W
thermal annealing
hybrid bonding
heterogeneous integration
advanced packaging
recess control
- Language
- ISSN
- 2377-5726
We report on a reduced thermal budget for hybrid bonding anneal using a single wafer thermal processing system (TPS). Robust bonding with excellent Cu gap closure and grain growth across the interface was achieved using a single step 300°C 5min TPS anneal, thereby reducing anneal duration by two orders of magnitude compared to the industry standard furnace anneal. The Cu gap closure efficacy with 350°C 5min TPS anneal was further verified electrically through functional 2Mb viachains @ 0.5um pitch with a Rs/link