ECS Journal of Solid State Science and Technology 5 (2016): P621–P626. doi:10.1149/2.0211610jss info:cnr-pdr/source/autori:Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto/titolo:Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing/doi:10.1149%2F2.0211610jss/rivista:ECS Journal of Solid State Science and Technology/anno:2016/pagina_da:P621/pagina_a:P626/intervallo_pagine:P621–P626/volume:5