A new tensile strained InGaAs/InGaAlAs quantum well structure in the 1.3 μm wavelength region is proposed for high temperature characteristics via quantum well band structure and optical gain calculations. To obtain such features, a tensile-strained InGaAs/InGaAlAs quantum well structure, which emits light dominated by TM polarization, is considered. This proposed structure has very high temperature characteristics (T0 > 130 K) due to its high density of state at the first transition edge. This results clearly show the potential of tensile strained quantum well structure usage for the high temperature operation of quantum well semiconductor lasers.