Electrically Pumped Quantum-Dot Lasers Grown on CMOS-Compatible 300 mm Si Wafers
- Resource Type
- Conference
- Authors
- Feng, Kaiyin; Shang, Chen; Hughes, Eamonn; Koscica, Rosalyn; Clark, Andrew; Debnath, Mukul; Leake, Gerald; Harame, David; Ludewig, Peter; Bowers, John
- Source
- 2022 28th International Semiconductor Laser Conference (ISLC) Semiconductor Laser Conference (ISLC), 2022 28th International. :1-2 Oct, 2022
- Subject
- Photonics and Electrooptics
Quantum dot lasers
Power lasers
Quantum dots
Photonic integrated circuits
Silicon
Optical pumping
Pump lasers
- Language
We demonstrate the first electrically pumped quantum-dot (QD) lasers grown on recessed 300 mm Si wafers, with maximum CW lasing output power of 125 mW at 20 °C. This significant advance in heteroepitaxial integration of III-V gain elements onto existing CMOS-compatible Si photonic circuits is promising for photonic integrated circuit integration.