A 0.1-10GHz Ultra-Wideband High-Gain Low-Noise Amplifier for UWB receiver
- Resource Type
- Conference
- Authors
- Jin, Zerun; Chen, Zhi-Jian; Wang, Riyan; Li, Bin; Lin, Xiao-Ling
- Source
- 2021 International Conference on Microwave and Millimeter Wave Technology (ICMMT) Microwave and Millimeter Wave Technology (ICMMT),2021 International Conference on. :1-3 May, 2021
- Subject
- Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Low-noise amplifiers
Impedance matching
Receivers
CMOS process
Topology
Noise measurement
Inductors
CMOS
low noise amplifier (LNA)
wideband
high-gain
resistive feedback
- Language
In this paper, a 0.1-10 GHz high-gain low-noise amplifier (LNA) for UWB based on a cascaded three-stage topology is presented. Bandwidth extension by the combination of a series inductor inside the feedback loop and a source-degeneration inductor is achieved at the input transistors to ensure the wideband input matching characteristic. Furthermore, an inductor is introduced at the drain of the third-stage transistor to improve the output matching characteristic. The LNA is simulated by SMIC 130 nm CMOS process PDK with 22 dB gain, 3.5 dB minimum NF. The total chip size is 0.42 mm 2 and consumes 30 mW from a 1.2-V supply.