Zn Doping Effect on Surface Morphology of Metamorphic InAs on GaAs Grown by MOVPE
- Resource Type
- Conference
- Authors
- Nakagawa, Shota; Imamura, Yuki; Hirata, Yasushi; Maeda, Koji; Arai, Masakazu
- Source
- 2021 26th Microoptics Conference (MOC) Microoptics Conference (MOC), 2021 26th. :1-2 Sep, 2021
- Subject
- Photonics and Electrooptics
Scanning electron microscopy
Epitaxial layers
Gallium arsenide
Surface morphology
Doping
Surface roughness
Rough surfaces
- Language
We investigate the effect of Zn doping on surface roughness during InAs growth on GaAs substrate by metal organic vapor phase epitaxy (MOVPE). The surface roughness was measured by atomic force microscope (AFM) and scanning electron microscope (SEM). We confirmed the Zn doping was effective to improve the surface roughness.