Spatio-temporal Characteristics of Plasma Channel in An Interdigitated GaAs Photoconductive Semiconductor Switch at nJ Optical Excitation
- Resource Type
- Conference
- Authors
- Wang, Yi; Xu, Ming; Li, Mengxia; Luo, Wei
- Source
- 2021 IEEE 4th International Electrical and Energy Conference (CIEEC) Electrical and Energy Conference (CIEEC), 2021 IEEE 4th International. :1-4 May, 2021
- Subject
- Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Electrodes
Monte Carlo methods
Semiconductor lasers
Optical switches
Gallium arsenide
Transportation
Laser stability
GaAs PCSS
high gain (HG)
plasma channel
filamentary current
- Language
To explore the transient characteristics and stability of gallium arsenide photoconductive semiconductor switches (GaAs PCSS) in high gain (HG) mode, the GaAs PCSS with interdigitated electrodes whose gaps are in the order of ~μm, is performed at 1-kHz optical excitation. The spatio-temporal characteristics of the plasma channel consisted of a large number of photo-generated electron-hole pairs are demonstrated by the simulation of Monte Carlo. The results show that HG mode at 1-kHz repetitive operation can be achieved with the special electrode structure under nJ optical excitation and the generation of the plasma channel can be attributed to the accumulation of high-density electron-hole pairs and the transportation of the high-density filamentary current.