High- and Low-frequency Accelerated Stress Tests for Aging Assessment of MOSFET Parameters
- Resource Type
- Conference
- Authors
- Gultekin, Muhammed Ali; Yang, Qian; Bazzi, Ali; Pattipati, Krishna; Joshi, Shailesh; Farooq, Muhamed; Ukegawa, Hiroshi
- Source
- 2021 IEEE International Electric Machines & Drives Conference (IEMDC) Electric Machines & Drives Conference (IEMDC), 2021 IEEE International. :1-4 May, 2021
- Subject
- Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
Robotics and Control Systems
Transportation
Degradation
Resistance
MOSFET
Life estimation
Logic gates
Capacitance
Silicon
accelerated aging test
MOSFETs
on-state resistance
gate-to-source capacitance
- Language
Reliability assessment of power semiconductor devices requires accelerated stress tests. Different test methods might produce different results. In this paper, two different test methods are used for on-state resistance degradation for Si MOSFETs: High frequency cycling and low frequency cycling. Presented results indicate that the degradation of on-state resistance occurs irrespective of which method is used. Additionally, gate-to-source capacitance degradation is shown where results show that the gate-to-source impedance degrades over time.