Middle of Line (MOL) Process Investigation in Ring Oscillator failure
- Resource Type
- Conference
- Authors
- Chan, Victor; Bergendahl, M.; Choi, S.; Gaul, A.; Strane, J.; Greene, A.; Demarest, J.; Li, J.; Le, C.; Teehan, S.; Guo, D
- Source
- 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2020 31st Annual. :1-4 Aug, 2020
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Logic gates
Metals
Inverters
Ring oscillators
Layout
Etching
- Language
- ISSN
- 2376-6697
Ring Oscillators (ROs) are used for yield learning during the research phase of a CMO technology. We performed cross-sections and showed that the open and short defects are in the middle of line (MOL) gate structures. The defects which are related to MOL or prior processes, as well as the design and density, will be discussed in the paper.