On the current computing platforms, the memory wall between processor and memory has become the toughest challenge for the traditional Von-Neumann computer architecture. Computing-in-Memory (CIM) is taken as a promising approach to solving the above bottleneck in computing systems. In this paper, we propose a CIM platform with field-free spinorbit torque magnetic random access memory (SOT-MRAM). The self-reference (SelfRef) method is designed to enhance the read reliability and directly obtain logic results through memory-like read operations without adding logic cells. Memory read/write and logic operations, including NOT, AND/NAND and OR/NOR, can be implemented in the same SOT-MRAM chip. The speed and power penalties caused by SelfRef scheme are acceptable thanks to the ultrafast switching of the SOT. The read reliability and logic correctness of the proposed CIM are demonstrated by hybrid simulation on a 40 nm technology node.