An Electro-thermo-mechanical Model Basing on Experimental Results for Press-pack IGBT Including MOS Side Two-Dimensional Effects
- Resource Type
- Conference
- Authors
- Gu, Miaosong; Cui, Xiang; Tang, Xinling; Peng, Cheng; Zhao, Zhibin
- Source
- 2019 IEEE Applied Power Electronics Conference and Exposition (APEC) Applied Power Electronics Conference and Exposition (APEC), 2019 IEEE. :502-507 Mar, 2019
- Subject
- Power, Energy and Industry Applications
Insulated gate bipolar transistors
Clamps
Force
Integrated circuit modeling
Stress
Piezoresistance
Mathematical model
Press Pack IGBT
piezoresistive effect
IGBT model
- Language
- ISSN
- 2470-6647
Because of the tremendous clamping force to keep all components of press pack IGBTs (PP-IGBTs) electrically and mechanically contact well, the piezoresistive effect is not negligible, and an Electro-thermo-mechanical IGBT model suitable for circuit simulation is needed in PP-IGBTs design and application. This paper has studied the influence of the mechanical clamping force on the IGBT switching characteristics, based on a large number of experiments. An improved Hefner IGBT model is proposed considering the MOS side 2-D effect and anisotropic carrier mobility. The accuracy of the proposed model is validated by comparing the computed results with experimental ones.