We present a novel mechanism of resistive-switching phenomenon in nanoscale point-contact devices based on conducting perovskites, cuprates, manganites, and bismuthates. The measurements of their current-voltage characteristics at room temperature and 77 K have revealed bipolar hysteretic behavior that is caused, in our opinion, by the presence of a ferroelectric phase in the near-interface region of the complex-oxide samples. We interpret our observations in terms of the active oxygen-deficient layer formed at the metal-perovskite oxide interface where the electric-dipole moment switching is induced by an external electric field.