Structural and electrical characterization of silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films
- Resource Type
- Conference
- Authors
- Chow, Philippe K.; Hudspeth, Quentin; Warrender, Jeffrey
- Source
- 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM) Photonics Society Summer Topical Meeting Series (SUM), 2017 IEEE. :63-64 Jul, 2017
- Subject
- Photonics and Electrooptics
Silicon
Gold
Films
Spectroscopy
Substrates
Electrical resistance measurement
- Language
- ISSN
- 2376-8614
Raman spectroscopy and Rutherford backscattering spectrometry reveal that the thickness of a gold film deposited on silicon influences resolidification after pulsed-laser melting, giving rise to surface morphologies not observed with ion-implanted and laser-melted silicon. As film thickness approaches 5nm, these morphologies dominate the electrical behavior.