Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells
- Resource Type
- Conference
- Authors
- Balocchi, Andrea; Azaizia, Sawsen; Carrere, Helene; Amand, Thierry; Arnoult, Alexandre; Fontaine, Chantal; Liu, Baoli; Marie, Xavier
- Source
- 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) Nanotechnology Materials and Devices Conference (NMDC), 2016 IEEE. :1-2 Oct, 2016
- Subject
- Aerospace
Bioengineering
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Electrons
Physics
Reviews
Gallium arsenide
Semiconductor device measurement
Nanostructures
Crystals
- Language
The electrical control of the conduction band electron spin relaxation time is demonstrated in (111)-oriented GaAs quantum wells embedded in a diode structure for all the three spatial directions. By applying an external bias a large increase or decrease of the electron spin relaxation time can be achieved due to the compensation of the Dresselhaus spin-splitting by the Rashba one. A similar effect is demonstrated in (111) piezoelectric sturctures without the need of any external bias.