Impact of wet etchant with different PH value on the performance of back-channel-etch a-IGZO thin-film-transistor
- Resource Type
- Conference
- Authors
- Ren, Chongyang; Lu, Hongjuan; Xiao, Xiang; Deng, Wei; Xiao, Yuxiang; Zhang, Shengdong
- Source
- 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Active-Matrix Flatpanel Displays and Devices (AMFPD), 2016 The 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices. :139-142 Jul, 2016
- Subject
- Communication, Networking and Broadcast Technologies
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Robotics and Control Systems
Logic gates
Etching
Threshold voltage
Rough surfaces
Surface roughness
Surface topography
- Language
Aqueous ammonia is used as the new additive to the H 2 O 2 -based etchant for back-channel-etch (BCE) amorphous Indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) to pattern Mo source/drain. The Mo residue after being etched by H 2 O 2 :NH 3 ·H 2 O is removed completely by adjusting the PH value to above 7. The BCE a-IGZO TFTs fabricated with the new solution exhibit excellent performances with the field effect mobility of 12.26 cm 2 V −1 s −1 , threshold voltage of 0.17 V and sub-threshold swing of 0.24 V/dec when PH value is 9.8. The threshold voltage shift of the device is less than −0.5 V under gate-bias voltage stress of ±30V for 1hour.