Total dose radiation effect simulations on a high-precision data acquisition system
- Resource Type
- Conference
- Authors
- Mikkola, Esko; Vermeire, Bert; Chiu, Terence; Barnaby, Hugh; Parks, H.G.
- Source
- 2007 9th European Conference on Radiation and Its Effects on Components and Systems Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on. :1-6 Sep, 2007
- Subject
- Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Radiation effects
Data acquisition
Circuit simulation
Computational modeling
System testing
Circuit testing
Random access memory
Degradation
USA Councils
Leakage current
Behavioral Modeling
CMOS
Mixed Signal Circuits
Radiation Effects
Total Ionizing Dose (TID)
VHDL-AMS
- Language
- ISSN
- 0379-6566
A novel method to evaluate total dose radiation response on large mixed signal circuits is described. The method is based on partly behavioral, partly structural simulation on the VHDL-AMS language. Results obtained with the developed simulation method are compared to total dose testing results of an embedded high-precision data acquisition system. The system was total dose tested until functional failure in a Cobalt-60 irradiation chamber. Photoemission microscopy (PEM) analysis showed severe TID induced leakage currents inside the 1.2 kbyte SRAM memory sub-system. The SRAM sub-system was TID simulated with the developed method, and the results were compared to the irradiation test results. The simulation results suggest that the drain-to-source leakage currents inside the SRAM sub-system might not be the only cause for the system failure.