A 23-30 GHz Low-Phase-Noise 5-Bit Voltage-Controlled Oscillator in 90-nm CMOS Process
- Resource Type
- Conference
- Authors
- Chen, Po-Yuan; Chen, Jun-Liang; Chang, Hong-Yeh
- Source
- 2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2024 IEEE 24th Topical Meeting on. :79-82 Jan, 2024
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
General Topics for Engineers
Photonics and Electrooptics
Varactors
Phase noise
Power demand
Voltage-controlled oscillators
Switches
CMOS process
Tuning
CMOS
low phase noise
microwave
millimeter-wave
RFIC
voltage-controlled oscillator (VCO)
wide tuning range
- Language
- ISSN
- 2474-9761
In this paper, a Ka-band 5-bit voltage-controlled oscillator (VCO) is presented using a 90-nm CMOS process. The proposed VCO is composed of 5-bit switched-capacitor array (SCA) and 1-bit switchable varactor array to achieve a wide tuning range of 27.5% and an excellent tuning figure-of-merit (FoMT) of −193.1 dBc/Hz. The proposed 5-bit VCO also demonstrates a lowest phase noise of -103.5 dBc/Hz at 1-MHz offset frequency, corresponding to a FoMPN of −184.4 dBc/Hz. The measured oscillation frequency is from 22.6 to 29.8 GHz with a differential output power of higher than −3 dBm. The chip size is 0.94 $\times$ 0.81 mm2. The core dc power consumption is merely 3 mW with a supply voltage of 0.6 V. The circuit performances can be compared to the reported silicon-based advanced VCOs.