Temperature Dependence of Terrestrial Neutron Induced Failures in Commercial Silicon and Silicon Carbide Power MOSFETs
- Resource Type
- Conference
- Authors
- Principato, Fabio; Cazzaniga, Carlo; Kastriotou, Maria; Frost, Christopher; Buttacavoli, Antonino; Abbene, Leonardo; Pintacuda, Francesco
- Source
- 2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2022 22nd European Conference on. :1-4 Oct, 2022
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Nuclear Engineering
Photonics and Electrooptics
Robotics and Control Systems
Signal Processing and Analysis
Temperature sensors
Temperature measurement
Temperature dependence
MOSFET
Silicon carbide
Neutrons
Silicon
failure in time
temperature
chip irradiation
power devices
Single-Event Burnout
Space Weather
- Language
- ISSN
- 1609-0438
Accelerated neutron tests on Si and SiC power MOSFETs at different temperatures were performed at ChipIr facility (Didcot, UK). The results show a strong correlation between the temperature dependence of the avalanche voltage and that of the neutron failure rate.