V- and W-band GaN MMIC Switches
- Resource Type
- Conference
- Authors
- Sonnenberg, Timothy; Romano, Tony; Verploegh, Shane; Popovic, Zoya
- Source
- 2023 18th European Microwave Integrated Circuits Conference (EuMIC) Microwave Integrated Circuits Conference (EuMIC), 2023 18th European. :257-260 Sep, 2023
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Microwave integrated circuits
Power measurement
Silicon carbide
Insertion loss
Switches
HEMTs
Microwave circuits
Broadband
GaN
HEMT
isolation
MMIC
power handling
switch
V-band
W-band
1-dB compression
- Language
This paper presents the design and measured continuous wave (CW) performance of several V- and W-band GaN MMIC HEMT switches in the HRL T340 nm T-gate process. Several shunt switch types are designed and characterized in small and large signal operation. A SPST switch achieves 0. 9-2.2dB of insertion loss from 60 to 100 GHz with 30 dB isolation. Two SPDT switches are compared: one with a single shunt HEMT achieving 1-1. 5dB of insertion loss from 65 to 105 GHz with 20 dB isolation, and the other with two shunt HEMTs showing 1. 7-6dB insertion loss from 60 to 105 GHz with 35 dB of isolation. A SP4T with double shunt HEMTs in each branch attains an insertion loss of 3.7-7.5 from 50-105 GHz with up to 40dB of isolation in one of two symmetrical branches. The switches are measured with incident power from 0 to 20dBm at 92 GHz with no signs of compression. Nonlinear simulations agree with measurements within the available testing power range, and indicate a 1-dB compression point above 40 dBm for the SPST.