Analysis of Dielectric Prebreakdown of High-k Stacking Polycrystalline MIM by Stochastic Trap-Clusters Growing and Percolation-Based Transportation
- Resource Type
- Periodical
- Authors
- Lin, H.; Tamura, C.; Akiyama, K.; Nakamura, G.; Nagai, H.; Watanabe, H.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(9):4793-4799 Sep, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Tunneling
Electron traps
Dielectrics
Timing
Cathodes
Stochastic processes
Leakage currents
Dielectric breakdown (DB)
metal-insulator-metal (MIM) capacitor
percolation
polycrystalline
stress-induced leakage current (SILC)
time-dependent DB (TDDB)
ZrO₂
- Language
- ISSN
- 0018-9383
1557-9646
We propose a method to analyze the dielectric prebreakdown (DB) which is based on: 1) charge transport; 2) stochastic trap-cluster generations; and 3) percolation in a metal–insulator–metal (MIM) stacked polycrystalline high- ${k}$ capacitor of TiN–TiO2–ZrO2–TiO2–TiN. We assume that measured dielectric leakage current until the breakdown is comprised of transient transports under static fields: direct tunneling, trap-assisted tunneling (TAT), and inelastic tunneling. The charge transports induce trap generation and formation of stochastic trap-cluster. The generated trap-cluster amplified the stress-induced leakage current (SILC). One of the clusters can be expanded and electrically link the cathode and anode throughout the dielectric to form a critical path. We can model the current through this path analytically by partition function and percolation. By careful analysis of measured time-dependent dielectric leakage currents, we found that prebreakdown is most related to SILC and inelastic tunneling at a low electric field (< 4 MV/cm).