Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone
- Resource Type
- Article
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- In
Journal of Colloid And Interface Science 15 July 2023 642:408-420 - Subject
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- ISSN
- 0021-9797