Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD.
- Resource Type
- Article
- Source
- Crystals (2073-4352); Feb2023, Vol. 13 Issue 2, p193, 12p
- Subject
SURFACE structure DOPING agents (Chemistry) X-ray photoelectron spectroscopy CHEMICAL vapor deposition RAMAN spectroscopy - Language
- ISSN
- 20734352