Low saturation magnetization and low dielectric constant significantly limited the application of Yttrium iron garnet (Y 3 Fe 5 O 12 , YIG) film, which could be enhanced through structural distortion. In this work, Y 3-x Pr x Fe 5 O 12 (YPr x IG) films were fabricated using chemical solution deposition method. The substitution of Pr3+ for Y3+ was adopted to regulate the symmetry of its polyhedron to induce a structural distortion owing to a larger ion radius of Pr3+ than that of Y3+. YPr 0.20 IG film exhibited a higher saturation magnetization of 241.2 emu/cm3 than the pure YIG film owing to the enhanced super-exchange from the increased FeO–O-FeT bond angle. The dielectric constant of YPr 0.20 IG film increased to 22.4 at 12.4 GHz, which was the contribution of electron polarization and ion polarization of Fe2+. The band gap value of YPr 0.20 IG film was reduced to 2.80 eV. These could be physically clarified that the electrons between Fe2+ and Fe3+ turned to migrate from the valence band to the conduction band. [Display omitted] • Y 3-x Pr x Fe 5 O 12 films were integrated on SiO 2 substrate using CSD. • An excellent M s of 241.2 emu/cm3 was obtained in YPr 0.20 IG film. • The dielectric constant of YPr 0.20 IG film was increased to 22.4 at 12.4 GHz. • The mechanism of loss variation can be explained based on the band gap. [ABSTRACT FROM AUTHOR]