Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates.
- Resource Type
- Article
- Source
- Crystals (2073-4352); Jan2023, Vol. 13 Issue 1, p62, 9p
- Subject
EPITAXIAL layers EPITAXY UNIFORMITY HOMOEPITAXY CHEMICAL vapor deposition - Language
- ISSN
- 20734352