Microstructure and ferroelectric properties of bi-excess Bi4Ti3O12 thin films grown on Si and Pt/Ti/SiO2/Si substrates.
- Resource Type
- Article
- Authors
- Liu, Yong; Fan, Liqun; Yi, Wentao; Yan, Chunyan; Ma, Jie; Ji, Qiyan; Lin, Qiaoli
- Source
- Ferroelectrics. 2020, Vol. 554 Issue 1, p144-149. 6p.
- Subject
- *FERROELECTRIC thin films
*THIN films
*BISMUTH
*DIFFRACTION patterns
*SCANNING electron microscopy
*MICROSTRUCTURE
*X-ray microscopy
- Language
- ISSN
- 0015-0193
Bismuth layer-structured ferroelectric Bi4Ti3O12 thin films have been deposited on n-type Si(111) and Pt(111)/Ti/SiO2/Si substrates using rf-magnetron sputtering process. The effects of substrates and annealing treatments on microstructure and ferroelectric properties were investigated. Scanning electron microscopy and X-ray diffraction patterns exhibited that the as-deposited thin films were noncystalline and transformed to crystalline Bi4Ti3O12 phase with a second phase of Bi12TiO20 after annealed at 700 °C. Ferroelectric properties showed that as-deposited thin film in metal-ferroelectric-semiconductor capacitor form and annealed thin film in metal-ferroelectric-metal form exhibited typical ferroelectric behaviors, wherein the values of remnant polarization were around 0.8 µC/cm2 and 4.8 µC/cm2, respectively. [ABSTRACT FROM AUTHOR]