Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer.
- Resource Type
- Article
- Source
- Applied Sciences (2076-3417); Jan2019, Vol. 9 Issue 1, p162, 7p
- Subject
SEMICONDUCTOR lasers QUANTUM wells MOLECULAR beam epitaxy - Language
- ISSN
- 20763417