Optimization of the parameters of power sources excited by β-radiation.
- Resource Type
- Article
- Authors
- Bulyarskiy, S.; Lakalin, A.; Abanin, I.; Amelichev, V.; Svetuhin, V.
- Source
- Semiconductors. Jan2017, Vol. 51 Issue 1, p66-72. 7p.
- Subject
- *SILICON diodes
*ENERGY conversion
*OPEN-circuit voltage
*SPECTRAL energy distribution
*SEMICONDUCTORS
*RADIATION
- Language
- ISSN
- 1063-7826
The experimental results and calculations of the efficiency of the energy conversion of Ni-63 β-radiation sources to electricity using silicon p-i-n diodes are presented. All calculations are performed taking into account the energy distribution of β-electrons. An expression for the converter open-circuit voltage is derived taking into account the distribution of high-energy electrons in the space-charge region of the p-i-n diode. Ways of optimizing the converter parameters by improving the technology of diodes and optimizing the emitter active layer and i-region thicknesses of the semiconductor converter are shown. The distribution of the conversion losses to the source and radiation detector and the losses to high-energy electron entry into the semiconductor is calculated. Experimental values of the conversion efficiency of 0.4-0.7% are in good agreement with the calculated parameters. [ABSTRACT FROM AUTHOR]