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1 . Conference
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
저자
by
Millesimo, M.
;
Fiegna, C.
;
Bakeroot, B.
;
Borga, M.
;
Posthuma, N.
, et al.
소스
2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-6 Apr, 2024
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7 . Academic Journal
1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
저자
by
Kumar, S.
;
Geens, K.
;
Vohra, A.
;
Wellekens, D.
;
Cingu, D.
, et al.
소스
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(4):657-660 Apr, 2024
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7 . Academic Journal
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
저자
by
Modolo, N.
;
Fregolent, M.
;
Masin, F.
;
Benato, A.
;
Bettini, A.
, et al.
소스
In
Microelectronics Reliability
November 2022 138
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7 . Academic Journal
Role of the GaN-on-Si Epi-Stack on ΔRON Caused by Back-Gating Stress
저자
by
Millesimo, M.
;
Borga, M.
;
Valentini, L.
;
Bakeroot, B.
;
Posthuma, N.
, et al.
소스
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(10):5203-5209 Oct, 2023
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7 . Academic Journal
Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs
저자
by
Tang, S.
;
Bakeroot, B.
;
Huang, Z.
;
Chen, S.
;
Lin, W.
, et al.
소스
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(2):449-453 Feb, 2023
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7 . Academic Journal
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
저자
by
Millesimo, M.
;
Borga, M.
;
Bakeroot, B.
;
Posthuma, N.
;
Decoutere, S.
, et al.
소스
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(11):1846-1849 Nov, 2022
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7 . Academic Journal
Prehospital antibiotics in the ambulance for sepsis: a multicentre, open label, randomised trial
저자
by
Alam, N.
;
Nanayakkara, P.W.B.
;
Oskam, E.
;
Stassen, P.M.
;
Haak, H.R.
, et al.
소스
In
The Lancet Respiratory Medicine
January 2018 6(1):40-50
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7 . Academic Journal
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices
저자
by
Modolo, N.
;
De Santi, C.
;
Baratella, G.
;
Bettini, A.
;
Borga, M.
, et al.
소스
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(8):4432-4437 Aug, 2022
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7 . Academic Journal
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level
저자
by
Rossetto, I.
;
Meneghini, M.
;
Canato, E.
;
Barbato, M.
;
Stoffels, S.
, et al.
소스
In
Microelectronics Reliability
September 2017 76-77:298-303
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7 . Academic Journal
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
저자
by
Tallarico, A.N.
;
Millesimo, M.
;
Bakeroot, B.
;
Borga, M.
;
Posthuma, N.
, et al.
소스
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(2):507-513 Feb, 2022
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