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1 . Academic Journal
Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes
저자
by
Vizkelethy, G.
;
King, M.P.
;
Aktas, O.
;
Kizilyalli, I.C.
;
Kaplar, R.J.
.
소스
In
Nuclear Inst. and Methods in Physics Research, B
1 August 2017 404:264-268
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7 . Academic Journal
Impacts of Wide Band Gap Power Electronics on Photovoltaic System Design
저자
by
Cunningham, D.W.
;
Carlson, E.P.
;
Manser, J.S.
;
Kizilyalli, I.C.
.
소스
IEEE Journal of Photovoltaics IEEE J. Photovoltaics Photovoltaics, IEEE Journal of. 10(1):213-218 Jan, 2020
Full Text (IEEE)
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6 . Academic Journal
Reliability of large periphery GaN-on-Si HFETs
저자
by
Singhal, S.
;
Li, T.
;
Chaudhari, A.
;
Hanson, A.W.
;
Therrien, R.
, et al.
소스
In
Microelectronics Reliability
2006 46(8):1247-1253
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7 . Academic Journal
Vertical GaN Power Diodes With a Bilayer Edge Termination
저자
by
Dickerson, J.R.
;
Allerman, A.A.
;
Bryant, B.N.
;
Fischer, A.J.
;
King, M.P.
, et al.
소스
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 63(1):419-425 Jan, 2016
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7 . Conference
Barriers to the Adoption of Wide-Bandgap Semiconductors for Power Electronics
저자
by
Kizilyalli, I.C.
;
Carlson, E.P.
;
Cunningham, D.W.
.
소스
2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :19.6.1-19.6.4 Dec, 2018
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5 . Conference
A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency
저자
by
Therrien, R.
;
Singhal, S.
;
Johnson, J.W.
;
Nagy, W.
;
Borges, R.
, et al.
소스
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :568-571 2005
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7 . Conference
High perfonnance and low cost LDMOS devices for 3G base stations
저자
by
Xie, Z.
;
Shibib, A.
;
Brennan, J.
;
Desko, J.
;
Farrel, D.
, et al.
소스
34th European Microwave Conference, 2004. Microwave Conference, 2004. 34th European. 3:1177-1180 2004
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7 . Conference
Phase shift lithography in the manufacture of sub-120 nm low-voltage DSP circuits
저자
by
Kizilyalli, I.C.
;
Watson, G.P.
;
Kohler, R.A.
;
Nalamasu, O.
;
Harriott, L.R.
.
소스
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Electron devices meeting Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International. :829-832 2000
Full Text (IEEE)
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7 . Academic Journal
Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes
저자
by
Mauch, D.L.
;
Zutavern, F.J.
;
Delhotal, J.J.
;
King, M.P.
;
Neely, J.C.
, et al.
소스
IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 32(12):9333-9341 Dec, 2017
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7 . Conference
Multi-level metal CMOS manufacturing with deuterium for improved hot carrier reliability
저자
by
Kizilyalli, I.C.
;
Weber, G.
;
Chen, Z.
;
Abeln, G.
;
Schonfield, M.
, et al.
소스
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) Electron devices - IEDM 1998 Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International. :935-938 1998
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