Three preprints are presented. The first, entitled ''Glow Discharge Optical Spectroscopy Measurement of Dopant Concentrations in a-Si:H,'' reports significant differences between the ratio of boron to silicon of the films and that of their deposition plasmas. The second, entitled ''Growth Morphology and Defects in Plasma-Deposited a-Si:H Films,'' presents structural studies that show that a major class of defect is an anisotropic density fluctuation. Studies of the hydrogen environment suggest that an inhomogeneous hydrogen distribution is associated with these fluctuations. From considerations of the deposition chemistry and nucleation theory, a model is proposed to describe the film growth process and its relationship to defects. The third, entitled ''Luminescence and ESR Studies of Defects in Hydrogenated Amorphous Silicon,'' demonstrates that the two experiments involve identical recombination transitions, and identify two separate processes. One process involves defect states, and from the doping dependence of light induced ESR, it is deduced that the electronically active defects are dangling bonds with positive electronic correlation energy. (LEW)