Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2
- Resource Type
- Conference
- Authors
- Source
- Conference: Presented at: Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2, IEEE PhotonicsGlobal@Singapore 2008, Singapore, Dec 08 - Dec 11, 2008
- Subject
- 36 MATERIALS SCIENCE
42 ENGINEERING ANNEALING
DIFFUSION
PHOTOLUMINESCENCE
QUANTUM WELLS
SILICA
- Language
- English
The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.