The recent trend of combining perovskite with other materials to enhance optoelectronic performance has garnered significant interest. In this paper, MAPb0.9Sn0.1I3 and ZnO–MAPb0.9Sn0.1I3 photodetector were prepared by frequency magnetron sputtering and sol–gel spin-coating method. Hybrid heterojunction photodetectors have more beneficial optoelectronic performance compared to MAPb0.9Sn0.1I3 photodetector, due to the presence of built-in electric fields, which can suppress the recombination of electrons and holes. At 7 V bias conditions, the responsivities of MAPb0.9Sn0.1I3 photodetector were 0.022 and 0.015 A/W, and the responsivities of ZnO–MAPb0.9Sn0.1I3 photodetector were 0.39 and 0.99 A/W obtained under 350 and 850 nm illumination, respectively. The maximum external quantum efficiency reaches 144.47%, the detection rate was 5.53 × 1011 Jones and the light to dark ratio was 2.95 × 103 of ZnO–MAPb0.9Sn0.1I3 photodetector. This study provides a basis for the preparation of perovskite heterojunction photodetectors with high optoelectronic performance. High performance UV–vis–NIR photodetectors based on ZnO/organic–inorganic hybrid Sn–Pb hybrid perovskite heterojunction.