We fabricated Graphene Oxide (GO) sandwiched by Multi-layer Graphene (MLG) for operating as an RRAM device. By investigating the UV-O3 treatment time dependency of the MLG/GO/MLG device, we confirmed the critical UV-O3 treatment time under sufficiently oxidized conditions for stable Resistive Random Access Memory (RRAM) operation during a repeating DC voltage sweep. The bipolar resistive switching mechanism of the MLG/GO/MLG structure was verified through the algebraic algorithmic relation between the current and voltage. This result provides important clues for developing fully 2D material-based electric devices.