Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS
- Resource Type
- Original Paper
- Authors
- Cao, Shu-rui; Ke, Xiao-yu; Ming, Si-ting; Wang, Duo-wei; Li, Tong; Liu, Bing-yan; Ma, Yao; Li, Yun; Yang, Zhi-mei; Gong, Min; Huang, Ming-min; Bi, Jin-shun; Xu, Yan-nan; Xi, Kai; Xu, Gao-bo; Majumdar, Sandip
- Source
- Journal of Materials Science: Materials in Electronics. 30(12):11079-11085
- Subject
- Language
- English
- ISSN
- 0957-4522
1573-482X
Gamma-ray radiation effects on the SiO2/HfO2/Al2O3/HfO2/Al2O3 based charge trapping memory have been investigated. Capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) measurements were applied to study the change in electrical properties from total dose radiation. C–V results showed a negative shift of flat-band voltage while dc memory window degraded after gamma-ray radiation. For DLTS result, two original peaks were found degraded while two new peaks appeared after radiation. Both C–V and DLTS results show that Gamma ray leads to the degradation of trapping effect.