Performance Investigation of Dual-Halo Dual-Dielectric Triple Material Surrounding Gate MOSFET with High-κ dielectrics for Low Power Applications
- Resource Type
- Academic Journal
- Authors
- Prashant Kumar; Neeraj Gupta; Nitin Sachdeva; Tarun Sachdeva; Munish Vashishath
- Source
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 2020-06 20(3):297-304
- Subject
- Channel engineering
gate stack engineering
high-κ materials
short channel effects
MOSFETs
- Language
- Korean
- ISSN
- 1598-1657
2233-4866
The rapidly growth in semiconductor industry puts huge demand of scalable devices with low standby power for future VLSI chips. The further mitigation in device dimension becomes a challenging task due to the existence of unavoidable short channel effects. The introduction of gate stack and channel engineering in MOSFET devices open a new window for future generation devices. This paper presents gate stack structure with low-κ dielectric material as silicon oxide and replacement of various high-κ dielectric materials to analyze the device performance. The unification of new oxide material in the device enhances the immunity against SCEs and improves the gate leakage current. Dual-Halo Dual-Dielectric Triple Material Surrounding Gate (DH-DD-TM-SG) MOSFET has shown better performance with high dielectric constant materials. The device exhibits more value of transconductance with high-κ dielectrics.