On-State Resistance Instability of Programmed Antifuse Cells during Read Operation
- Resource Type
- Academic Journal
- Authors
- Jae Hwan Han; Hyunjin Lee; Wansoo Kim; Gyuhan Yoon; Woo Young Choi
- Source
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 2014-10 14(5):503-507
- Subject
- Antifuse
reliability
on-state resistance instability
- Language
- Korean
- ISSN
- 1598-1657
2233-4866
The on-state resistance (RON) instability of standard complementary metal-oxide-semiconductor (CMOS) antifuse cells has been observed for the first time by using acceleration factors: stress current and ambient temperature. If the program current is limited, the RON increases as time passes during read operation.