Characteristics of low-temperature at 80°C HfO2 deposited by ALD (Atomic Layer Deposition) and electrical properties of NMOS capacitor
- Resource Type
- Conference
- Source
- 한국진공학회 학술발표회초록집. 2019-08 2019(8):43-43
- Subject
HfO2 Flexible Capacitor - Language
- Korean