A method for fabricating an amorphous metal-metalloid alloy layer for use in an IC device comprises providing a substrate in a reactor that includes a dielectric layer having a trench, pulsing a metal precursor into the reactor to deposit within the trench, wherein the metal precursor is selected from the group consisting of CpTa(CO)4, PDMAT, TBTDET, TaCl5, Cp2Co, Co-amidinates, Cp2Ru, Ru-diketonates, and Ru(CO)4, purging the reactor after the metal precursor pulse, pulsing a metalloid precursor into the reactor to react with the metal precursor and form an amorphous metal-metalloid alloy layer, wherein the metalloid precursor is selected from the group consisting of BH3, BCl3, catechol borane, AlMe3, methylpyrrolidinealane, AICl3, SiH4, SiH2Cl2, SiCl4, tetraalkylsilanes, GeH4, GeH2Cl2, GeCl4, SnCl4, trialkylantimony, SbMe3, SbEt3, arsine, and trimethylarsine, purging the reactor after the metalloid precursor pulse, and annealing the amorphous metal-metalloid layer at a temperature between 50° C. and 700° C. for 5 to 1200 seconds.