수광층의 카바이드 함량 변화에 따른 실리콘 이종접합 태양전지특성 변화
Enhancing Solar Cell Properties of Heterojunction Solar Cell in Amorphous Silicon Carbide
- Resource Type
- Article
- Authors
- 김현성 / Hyun Sung Kim; 김상호 / Sang Ho Kim; 이영석 / Young Seok Lee; 정준희; 김용준 / Yong Jun Kim; 디오빈아이 / Vinh Ai Dao; 이준신 / Jun Sin Yi
- Source
- 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers. Jun 01, 2016 29(6):376
- Subject
- Heterojunction solar cell
Wide bandgap
Carbide
Conductivity
Absorption
- Language
- Korean
- ISSN
- 1226-7945
In this paper, the efficiency improvement of the heterojunction with intrinsic thin layer (HIT) solar cells is obtained by optimization process of p-type a-SiC:H as emitter. The optoelectronic of p-type a-SiC:H layers including the optical band-gap and conductivity under the methane gas content variation is conducted in detail. A significant increase in the Jsc by 1 mA/cm2 and Voc by 30 mV are attributed to enhanced photon-absorption due to broader band-gap of p-a-SiC:H and reduced band-offsets at p-side interface, respectively of HIT solar cells.