Fabrication of SOI FinFET Devices using Arsenic Solid-phase-diffusion
- Resource Type
- Article
- Source
- 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers. May 01, 2007 20(5):394
- Subject
Solid phase diffusion Ultra-shallow junction Nano-scale FinFET As-doped spin on-glass - Language
- Korean
- ISSN
- 1226-7945