Thin-film silicon/crystaline silicon heterojunction-type solar cels, combining the low-cost, low- temperature and light-weight of thin-film silicon with the high efficiency and high stability of crystaline silicon (c-Si), are studied widely due to the increased need for terrestrial and satelite applications. A major aspect when dealing with thin-film silicon/crystaline silicon heterojunction solar cels is quality of the silicon film-crystaline silicon hetero-interface. In this study, the carrier transport mechanisms in mixed phase (amorphous and microcrystaline) thin-film silicon/p type crystaline silicon heterojunction for various thin-film thicknesses and SiH4/H2 ratios are investi- gated. The electrical properties are strongly affected by the defect state distribution and the band offset at the hetero-interface. Two carrier transport mechanisms are recognized. The recombination process involving the interface states on the thin-film silicon side dominates at low forward bias (V < 0.4 V), whereas multi-step tunneling capture emission (MTCE) dominates at the high forward bias (0.4 < V < 0.8 V).