In general, reactive sputtering (atmosphere, Ar+O2) of Ti metal target at low temperature (<200 degree) and high pressure (1.0x10-2Torr) results in high photocatalytic activity of TiO2 films.Therefore, most studies are focused upon these sputtering conditions. Recent investigation revealed that similar high activity can also be obtained by RF sputtering of oxide target (TiO2) in Ar atmosphere. The aim of this work is to cover a wide variety of sputtering conditions (substrate temperature, pressure, the type of target, power, atmosphere, etc.) and to compare photocatalytic activities of TiO2 films prepared using RF magnetron sputtering.Crystal structures of the films were measured using X-ray diffraction (XRD). Photocatalytic activity was evaluated using decomposition rate of methylene blue (MB) under UV light (black light) irradiation.As result, high activities were obtained at the sputtering pressure higher than 200 degree. Photocatalytic activities increased with the sputtering pressure, whereas they were saturated at a certain pressure.