Characterizations of impurity doping in GaN crystal for the realization of nanowire-LD using GaInN/GaN multiple-quantum shell/tunnel junction / 量子殻/トンネル接合を用いたナノワイヤLD実現に向けたGaN結晶中の不純物ドーピング評価
- Resource Type
- Journal Article
- Source
- JSAP Annual Meetings Extended Abstracts. 2021, :2635
- Subject
19p-Z27-9 GaN III-V族窒化物結晶 nanowire ナノワイヤ 成長(MOVPE) 窒化ガリウム 結晶工学 - Language
- Japanese
- ISSN
- 2436-7613