Modeling of interelectrode parasitic elements of V-groove SiC MOSFET
- Resource Type
- Journal Article
- Authors
- Masayuki Hiromoto; Michihiro Shintani; Rui Zhou; Takashi Sato
- Source
- Nonlinear Theory and Its Applications, IEICE. 2018, 9(3):344
- Subject
- SPICE simulation
SiC power MOSFET
V-groove structure
device modeling
- Language
- English
- ISSN
- 2185-4106
We propose a physics-based model of interelectrode parasitic elements of a V-groove SiC power MOSFET with buried p-layers. The proposed model considers the voltage dependence of parasitic resistances and capacitances on the basis of the observations through technology computer aided design (TCAD) simulations. The gate-voltage dependence of the body diode is also modeled in accordance with device physics. Through comparison with measurement results, it is demonstrated that the proposed model successfully reproduces both I-V and C-V characteristics. The transient behavior using a buck converter is also well reproduced.