22aB6 Homoepitaxial Growth of ZnTe by Synchrotron Radiation Using Metalorganic Sources / 22aB6 有機金属原料を用いたシンクロトロン放射光によるZnTeのホモエピタキシャル成長(気相成長I)
- Resource Type
- Journal Article
- Authors
- H Ogawa; K Hayasida; M Nishio; O Uwatoku; Qixin GUO; 上徳 理; 小川 博司; 林田 和樹; 西尾 光弘; 郭 其新
- Source
- 日本結晶成長学会誌 / Journal of the Japanese Association for Crystal Growth. 1999, 26(2):24
- Subject
- Language
- Japanese
- ISSN
- 0385-6275
2187-8366
ZnTe growth has been investigated, using (100) oriented ZnTe substrates, by synchrotron radiation (SR)-excited epitaxy. The epitaxial growth is attainable even at room temperature. The growth characteristics have been investigated as functions of substrate temperature and source transport rate. The photoluminescence from the mms deposited by SR-excited growth has been observed.