Bonding temperature dependence of GalnAsP/InP wafer grown on directly bonded InP/Si substrate
- Resource Type
- Conference
- Authors
- Aikawa, Masaki; Nishiyama, Tetsuo; Kamada, Yuya Onuki Naoki; Han, Xu; Periyanayagam, Gandhi Kallarasan; Uchida, Kazuki; Sugiyama, Hirokazu; Hayasaka, Natsuki; Shimomura, Kazuhiko
- Source
- 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Low Temperature Bonding for 3D Integration (LTB-3D), 2017 5th International Workshop on. :75-75 May, 2017
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Bonding
Temperature dependence
Substrates
- Language
Bonding temperature dependence on the surface conditions and optical characteristics of MOVPE grown GalnAsP/InP laser structure using directly bonded InP/Si substrate were studied. We have changed the temperature for bonding InP and Si substrate between 350 and 450 °C. The void density and photoluminescence intensity were examined.