Molecular Beam Epitaxy Growth and Characterization of AlGaN Epilayer in the Nitrogen-rich Condition on Si Substrate
- Resource Type
- Conference
- Authors
- Zhang, Qihua; Yin, Xue; Zhao, Songrui
- Source
- 2021 Photonics North (PN) Photonics North (PN), 2021. :1-1 May, 2021
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Robotics and Control Systems
Transportation
Molecular beam epitaxial growth
Optoelectronic devices
Silicon
Etching
Wide band gap semiconductors
Nitrogen
Aluminum gallium nitride
AlGaN epilayer
Si
molecular beam epitaxy
N-rich
- Language
- ISSN
- 2693-8316
In this work, we demonstrate AlGaN epilayer in the nitrogen-rich condition on Si by molecular beam epitaxy. The epilayer is further confirmed to be nitrogen-polar.