Hot carrier degradation in nanowire (NW) FinFETs
- Resource Type
- Conference
- Authors
- Maiti, T. K.; Bera, M. K.; Mahato, S. S.; Chakraborty, P.; Mahata, C.; Sengupta, M.; Chakraborty, A.; Maiti, C. K.
- Source
- 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the. :1-4 Jul, 2008
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Hot carriers
Scattering
Silicon
Degradation
Logic gates
Electric potential
Threshold voltage
- Language
- ISSN
- 1946-1542
1946-1550
Hot carrier reliability of a nanowire Ω-FinFET is investigated for the first time. Hot holes injected into the gate oxide via hot-carrier injection (HCI) at the silicon (Si) - silicon dioxide (SiO 2 ) interface of Ω-FinFETs results in the formation of dangling silicon bonds due to the breaking of silicon-hydrogen bonds and lead to high interface traps generation. The trapping and/or bond breaking creates oxide charge and interface traps affect the Coulomb mobility. A quasi-two dimensional (quasi-2D) physics-based screening Coulomb scattering mobility model has been developed and implemented in Synopsys Sentaurus Device simulator.