Impact of H2, O2, and N2 anneals on atomic-scale surface flattening for 3-D Ge channel architecture
- Resource Type
- Conference
- Authors
- Morita, Yukinori; Ota, Hiroyuki; Masahara, Meishoku; Maeda, Tatsuro
- Source
- 2015 Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2015. :1-2 Jun, 2015
- Subject
- Components, Circuits, Devices and Systems
Surface morphology
Annealing
Rough surfaces
Surface roughness
Etching
Surface topography
- Language
- ISSN
- 2161-4636
2161-4644
We evaluated atomic-scale surface morphology changes of Ge wafers after thermal flattening in H 2 , O 2 , and N 2 gas ambient. Analysis of atomic force microscopy results revealed that the atomic steps and terraces of Ge were evident after annealing at over 500°C for 160 s. The atomistic surface morphologies varied with the different annealing atmospheres. Nearly uniform step-terrace structure due to the suppression of terrace etching was obtained on N 2 -annealed Ge surfaces.